Effects of chemical treatment of indium tin oxide electrode on its surface roughness and work function
Identifieur interne : 000152 ( Main/Repository ); précédent : 000151; suivant : 000153Effects of chemical treatment of indium tin oxide electrode on its surface roughness and work function
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Abstract
In this paper, we report the effects of chemical treatment of indium tin oxide (ITO) surface on its surface chemistry such as chemical composition and surface roughness and on its usage as an electrode with monolayer modification. Atomic force microscopy, angel-resolved X-ray photoelectron spectroscopy, and Kelvin probe force microscopy have been used to investigate the morphology and the chemical properties of commercial thin ITO films after several treatments commonly used prior to the formation of organic layer on the surface. The amount of spike present on the surface of as-received ITO substrates was significantly reduced by etching with KOH whereas the roughness of ITO increased with HCl etching. We demonstrated that the successive treatment of ITO electrode with HCl and KOH affects the surface characteristics such as roughness and work function, contributing to the potentiometric detection of tryptophan.
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Zaved Hossain Khan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo</s1><s2>Shinjuku-ku, Tokyo 169-8555</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Shinjuku-ku, Tokyo 169-8555</wicri:noRegion></affiliation></author><author><name sortKey="Nakanishi, Takuya" uniqKey="Nakanishi T">Takuya Nakanishi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo</s1><s2>Shinjuku-ku, Tokyo 169-8555</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Shinjuku-ku, Tokyo 169-8555</wicri:noRegion></affiliation></author><author><name sortKey="Osaka, Tetsuya" uniqKey="Osaka T">Tetsuya Osaka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo</s1><s2>Shinjuku-ku, Tokyo 169-8555</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Shinjuku-ku, Tokyo 169-8555</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0095499</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0095499 INIST</idno><idno type="RBID">Pascal:14-0095499</idno><idno type="wicri:Area/Main/Corpus">000039</idno><idno type="wicri:Area/Main/Repository">000152</idno></publicationStmt><seriesStmt><idno type="ISSN">0257-8972</idno><title level="j" type="abbreviated">Surf. coat. technol.</title><title level="j" type="main">Surface & coatings technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Chemical treatment</term><term>Electrodes</term><term>Kelvin probe</term><term>Roughness</term><term>Surface treatments</term><term>Tin oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement chimique</term><term>Oxyde d'étain</term><term>Electrode</term><term>Rugosité</term><term>Traitement surface</term><term>Microscopie force atomique</term><term>Sonde Kelvin</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we report the effects of chemical treatment of indium tin oxide (ITO) surface on its surface chemistry such as chemical composition and surface roughness and on its usage as an electrode with monolayer modification. Atomic force microscopy, angel-resolved X-ray photoelectron spectroscopy, and Kelvin probe force microscopy have been used to investigate the morphology and the chemical properties of commercial thin ITO films after several treatments commonly used prior to the formation of organic layer on the surface. The amount of spike present on the surface of as-received ITO substrates was significantly reduced by etching with KOH whereas the roughness of ITO increased with HCl etching. We demonstrated that the successive treatment of ITO electrode with HCl and KOH affects the surface characteristics such as roughness and work function, contributing to the potentiometric detection of tryptophan.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0257-8972</s0></fA01><fA02 i1="01"><s0>SCTEEJ</s0></fA02><fA03 i2="1"><s0>Surf. coat. technol.</s0></fA03><fA05><s2>244</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Effects of chemical treatment of indium tin oxide electrode on its surface roughness and work function</s1></fA08><fA11 i1="01" i2="1"><s1>ZAVED HOSSAIN KHAN (Md.)</s1></fA11><fA11 i1="02" i2="1"><s1>NAKANISHI (Takuya)</s1></fA11><fA11 i1="03" i2="1"><s1>OSAKA (Tetsuya)</s1></fA11><fA14 i1="01"><s1>Graduate School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo</s1><s2>Shinjuku-ku, Tokyo 169-8555</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>189-193</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15987</s2><s5>354000500414420260</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>45 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0095499</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface & coatings technology</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we report the effects of chemical treatment of indium tin oxide (ITO) surface on its surface chemistry such as chemical composition and surface roughness and on its usage as an electrode with monolayer modification. Atomic force microscopy, angel-resolved X-ray photoelectron spectroscopy, and Kelvin probe force microscopy have been used to investigate the morphology and the chemical properties of commercial thin ITO films after several treatments commonly used prior to the formation of organic layer on the surface. The amount of spike present on the surface of as-received ITO substrates was significantly reduced by etching with KOH whereas the roughness of ITO increased with HCl etching. 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